sup/sub70n06-14 vishay siliconix document number: 70291 s-57253erev. c, 24-feb-98 www.vishay.com faxback 408-970-5600 2-1 n-channel 60-v (d-s), 175 c mosfet v (br)dss (v) r ds(on) ( ) i d (a) 60 0.014 70 a d g s n-channel mosfet to-220ab top view gds suP70N06-14 sub70n06-14 to-263 s g top view drain connected to tab d
parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 70 a a continuous drain current (t j = 175 c) t c = 100 c i d 49 a pulsed drain current i dm 160 a avalanche current i ar 70 repetitive avalanche energy b l = 0.1 mh e ar 180 mj power dissipation t c = 25 c (to-220ab and to-263) p d 142 c w power dissipation t a = 25 c (to-263) d p d 3.7 w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit junction - to - ambient pcb mount (to-263) d r thja 40 c/w j unc ti on- t o- a m bi en t free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 1.05 notes: a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1o square pcb (fr-4 material). for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm free datasheet http://www..net/
sup/sub70n06-14 vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70291 s-57253erev. c, 24-feb-98
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